Abstract
In this work morphological, X-ray structural and optical studies of CdZnTe films grown by hot wall epitaxy method at relatively low substrate temperatures were performed. Possible mechanisms and processes of self-organization that occur during the growth of such structures are considered. It is shown that at thickness of film more than 130 nm on the surface, large (lateral size 150 - 200 nm, height - up to 10 nm) and small crystals are observed. The thicknesses and energy of the band gap width of the CdZnTe films grown at different growth times were determined. It is shown that the film absorption edge in the transmission spectra depends on the film thickness and the reasons for the shift of the film absorption edge are discussed.
Highlights
Thin films of cadmium telluride and CdZnTe solid solution based on it are widely used in the creation of solar cells [1-2], as well as devices in the infrared (IR) and terahertz (THz) range [3, 4 and references]
Using CdZnTe thin films requires knowledge of the factors influencing the processes of nucleation and formation of such structures
This is necessary to control the self-organization of such systems
Summary
Thin films of cadmium telluride and CdZnTe solid solution based on it are widely used in the creation of solar cells [1-2], as well as devices in the infrared (IR) and terahertz (THz) range [3, 4 and references]. The content of 4 % zinc leads to a perfect match of the lattice parameters with the material CdHgTe. Using CdZnTe thin films requires knowledge of the factors influencing the processes of nucleation and formation of such structures. Shape, composition, ordering and functionality of such semiconductor nanocrystals, it is possible to change the electronic and optical properties of structures with great accuracy. Considering all these characteristics gives rise to a new generation of nano- and microstructured materials with high innovative potential and determines the further process in technology [5-6]
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