Abstract
MnAs thin films were grown by low-temperature molecular beam epitaxy on semi-insulating GaAs(1 0 0) substrates under varying growth parameters, including the As 4/Mn flux ratio and Mn beam equivalent pressure. When the As 4/Mn flux ratio was set at 1–1.2, the Mn–As blocks were formed, and an increasing As 4/Mn flux ratio resulted in a growth of αMnAs with the growth direction of [ 1 ̄ 1 0 1] and the the mirror-like surface. Under restricted growth conditions, ferromagnetic hexagonal αMnAs layers were first prepared on GaAs(1 0 0) substrates at 250 °C, and orthorhombic Mn 3As 2 blocks were subsequently formed on the MnAs layers.
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