Abstract
We have investigated annealing conditions for producing silicon-on-nothing (SON) structures with extremely flat surfaces by high temperature annealing of high-aspect-ratio hole arrays fabricated on Si(001) surfaces. In the phase immediately after SON structures are formed through the surface-diffusion driven evolution induced by high temperature annealing, the SON surfaces are rough. We show that additional annealing after the SON structure formation at high temperatures, where preferential sublimation from step edges occurs, effectively removes the surface roughness to yield SON structures with extremely flat (001) surfaces with fairly low step densities.
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