Abstract
p-Type ultrananocrystalline diamond (UNCD)/hydrogenated amorphous carbon (a-C:H) composite films were fabricated by pulsed laser deposition using boron-doped graphite targets. Thermal analysis confirmed the occurrence of p-type conduction. The electrical conductivity increased with the doped amount of boron. An activation energy estimated from the Arrhenius plot was approximately 0.1 eV. Near-edge X-ray absorption fine structure spectra revealed that the σ*C–H peak weakened and the σ*C–B peak strengthened with an increase in the doped amount of boron. Fourier transform infrared spectroscopy showed that the sp3 C–H peak weakened with the doped amount of boron. These probably indicate that the hydrogen atoms that terminate the dangling bonds of UNCD crystallites are partially replaced with boron atoms.
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