Abstract
The focused ion beam (FIB) has proven to be an extremely powerful tool for the nanometer-scale machining and patterning of nanostructures. In this work, we experimentally study the behavior of AISI 420 martensitic stainless steel when bombarded by Ga+ ions in a FIB system. The results show the formation of nanometer sized spiky structures. Utilizing the nanospiking effect, we fabricated a single-tip needle with a measured 15.15 nanometer curvature radius and a microneedle with a nanometer sized spiky surface. The nanospikes can be made straight or angled, depending on the incident angle between the sample and the beam. We also show that the nanospiking effect is present in ferritic AISI 430 stainless steel. The weak occurrence of the nanospiking effect in between nano-rough regions (nano-cliffs) was also witnessed for austenitic AISI 316 and martensitic AISI 431 stainless steel samples.
Highlights
The focused ion beam (FIB) technique has been established as a powerful tool for micro and nanoscale imaging [1], sputtering, deposition [2], 3D machining [3], and surface modifications [4]
We experimentally study the behavior of AISI 420 martensitic stainless steel when bombarded by Ga+ ions in a FIB system
We show that nanospikes can be made straight or angled depending on the incident angle of the FIB
Summary
The focused ion beam (FIB) technique has been established as a powerful tool for micro and nanoscale imaging [1], sputtering, deposition [2], 3D machining [3], and surface modifications [4]. When an incident ion comes into contact with a targeted material, the ion enters into a set of collisions (higher than normal thermal energies) with the target atoms, a process known as a collision cascade. Sputtering occurs when an incident ion comes into contact with a targeted surface and transfers its momentum to the host atoms. A host atom on the surface will absorb a part of the ion’s kinetic energy. A quantitative measure of sputtering is defined through sputtering yield, i.e., the number of atoms removed by an incident ion. The sputtering yield is affected by the material composition, angle of incidence, the crystal structure of the substrate, redeposition, scanning speed, temperature of the target, and surface contaminations [6]
Sign-in/Register to view highlights & summary Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
