Abstract
We studied the rearrangement of ion-implanted hydrogen in 〈100〉 oriented n-type silicon wafers upon annealing and its effect on the crystal damage. The obtained results reveal information about the damage accumulation caused by the thermally induced rearrangement of the implanted Hydrogen. The gained knowledge was correlated to the depth distributions and orientations of H-platelets, which formed during annealing and were examined by cross-section transmission electron microscopy analysis.
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