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Abstract
The results of low-energy high-dose implantation of single-crystal c-Si by Cu+ ions at energy 40 keV, current density 8 μA/cm2 and doses of 3.1·1016 and 1.25·1017 ion/cm2 are presented. It was shown that if the dose is low Cu nanoparticles with average diameter of 10 nm are formed in a near-surface implanted Si layer. When the dose is higher Cu ions chemically interact with the Si atoms and the synthesis of the η″-phase Cu3Si instead of Cu nanoparticles is observed. Cu nanoparticles transformation to Cu3Si phase in the sample heated by long time implantation is discussed.
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