Abstract
The authors review the experimental research of the last decade into the laws of formation of the defects responsible for the deep levels in epitaxial layers of gallium arsenide grown from the vapor phase. The topics of their review include the influence of the ratio of the pressure of As and Ga in the vapor phase on defect concentration, the role played by the defects in carrier lifetime, density and mobility as well as in the ultimate electrical and photo conductivity of the material, the behavior of various feedstocks and impurities and their contributions to defect structure, and the dependence of defect concentration on growth conditions.
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