Abstract
The authors report on the formation of low-resistance and thermally stable Pd∕Ni∕Pd∕Ru Ohmic contacts to Mg-doped AlGaN. The contacts become Ohmic with a contact resistivity of (1.4±0.3)×10−5Ωcm2 upon annealing at 600°C for 1min in a N2 ambient. The samples do not experience significant degradation of the specific contact resistance and the surface roughness even after annealing at 600°C for 60min. Based on x-ray photoelectron spectroscopy depth profile results, atomic force microscopy, and contact resistivity-temperature data, possible Ohmic formation and carrier transport mechanisms are described and discussed.
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