Abstract
AbstractThis research successfully produces high quality cobalt titanate (CoTiO3) thin films, a high‐k material for gate dielectrics, on SiO2/Si(100) substrates via a spin‐coating method with a sol‐like precursor solution. This study prepares the precursor solution by reactions of cobalt acetate and titanium isopropoxide in 2‐methoxyethanol. The current work obtains CoTiO3 thin films after spin coating followed by post‐treatment with air under 550∼650 °C. A scanning electron microscope, determines film thickness and morphology and X‐ray diffraction identifies material structures. This study uses X‐ray photoelectron spectroscopy to analyze both elemental compositions and chemical bonding characters of the thin films. This work also investigates reaction pathways.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
