Abstract
Essential reaction induced by KrF laser irradiation in GeO2—SiO2 glasses was the pair generation of electron-trapped centers of Ge ion (GEC) and self-trapped hole (STH) centers of bridging oxygen. The GEC relaxed to GeE’ center during irradiation. This relaxation proceeded quickly with increasing GeO2 content. The concentration ratio of [STH] to [GEC + GeE'] was approximately 1:2. After annealing at room temperature, the majority of STH recombined with GEC (or GeE'). It was considered that the origin of this charge imbalance was the hole transfer from STH to other ions.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
