Abstract
Controlled nucleation of InAs quantum dots has been achieved byGa+ focused ion beam modification of GaAs(100) surfaces. Quantum dots may be induced inirradiated regions despite the fact that the deposited thickness is less than the criticalthickness for their formation under typical growth conditions when the ion dose is greater than1013 ions cm−2. We also find that the dot density increases with increasing ion dose, and reaches saturation forD>1014 ions cm−2. Parameters such as dot height and diameter are unaffected by the dose level.Thus, we show that the increase in dot density is a result of diffusion of adatomsfrom outside the patterned region. The mechanism for enhanced quantum dotformation is due to the formation of monolayer deep holes created in the substrateby the ion beam, which may be used to form regular arrays of quantum dots.
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