Abstract
GaAs buffer layers were patterned with Ga+ ions via a focused ion beam and then overgrown with InAs. Atomic force microscopy reveals a strong influence of the ion dose upon subsequent formation of InAs quantum dots. Uniformly dosed areas show an apparent reduction in the critical thickness for quantum dot formation and the area density of the dots increases with increasing ion dose, which is related to ion beam induced roughening of the surface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
