Abstract
In the present paper, we propose a novel method which permits us to fabricate fluorine-doped silicon dioxide (F-doped SiO2) films on various substrates at room temperature. The films were selectively grown on a substrate by simultaneous 157-nm F2 laser illumination of a silicone rubber target, a polytetrafluoroethylene (PTFE) target, and the substrate. Fourier transform infrared spectroscopy (FT-IR) spectra and X-ray photoelectron spectroscopy (XPS) spectra showed that the films had a uniform fluorine concentration in the depth direction and no contaminants, such as carbon and hydrocarbon. The films were photochemically grown on the substrate in an atmosphere of gases evolved from silicone and PTFE by F2 laser illumination. The relative dielectric constant of the films was lower than that of the SiO2 films grown by F2 laser illumination without a PTFE target, namely, 3.6 at a laser fluence of 22 mJ/cm2. The F-doped SiO2 film formed at a higher a laser fluence had a lower refractive index and lower relative dielectric constant.
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