Abstract
We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission line at 558 nm and of intense bands in the 600–750 nm spectral range. Characterization at liquid He temperature reveals the presence of a structured set of lines in the 600–670 nm spectral range. We discuss the dependence of the emission properties of F-related optical centers on different experimental parameters such as the operating temperature and the excitation wavelength. The correlation of the emission intensity with F implantation fluence, and the exclusive observation of the afore-mentioned spectral features in F-implanted and annealed samples provides a strong indication that the observed emission features are related to a stable F-containing defective complex in the diamond lattice.
Highlights
We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing
Following from a previous report with preliminary results on this system[24], in this work we report on the systematic characterization in photoluminescence (PL) under different optical excitation wavelengths of F-related color centers in diamond created upon ion implantation and subsequent annealing
Not characteristic in its spectral features, the observation of this band is consistent with what reported in Ref.[24] under 488 nm excitation, where a broad emission band in the 590–800 was formed upon F implantation at a 5 × 1014 cm−2 ion fluence and a subsequent thermal annealing at 1600 °C
Summary
We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing.
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