Abstract
Fluence-dependent carrier lifetime variation in heavily proton-irradiated Si detectors has been investigated by the microwave probed photoconductivity (MW-PCD) and transient grating (TG) techniques. Nearly linear decrease of carrier recombination lifetime, from hundreds of ns to few ns, as a function of fluence has been found in Si detectors fabricated on FZ standard and oxygenated material, after irradiation by 24 GeV/ c protons with fluence in the range from 10 14 to 10 15 cm −2. Radiation-defect dependent features of carrier transport and recombination have been analyzed. Models of carrier recombination centers associated with the radiation defects are discussed.
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