Abstract
We demonstrated the formation and reading of flexoelectrically-switched polarization nanobits in c-oriented, epitaxial layered-perovskite thin films. Highly c-oriented epitaxial SrBi2Nb2O9 (SBN) thin films were deposited on Nb-doped single crystal (100) SrTiO3 (Nb:STO) substrates via pulsed laser deposition (PLD) technology. X-ray diffraction (XRD) experiments, ferroelectric hysteresis loops, leakage current curves, and fatigue characteristics revealed that these films preferred in-plane oriented domains. Flexoelectrically switched polarization nanobits with horizontally switched domains were formed within an upwardly switched domain of the c-oriented epitaxial SBN thin film by applying external forces orthogonal to the surface. In particular, flexoelectrically switched polarization nanobits didn't have out-of-plane-oriented domains, reflecting the c-oriented nature of the Aurivillius SBN thin film.
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