Abstract
Bismuth telluride (Bi2Te3) is gaining increasing attention as a material that exhibits flexo-photovoltaic effect in the infrared region, in addition to conventional thermoelectric materials and topological insulators. However, the flexo-photovoltaic effect is observed only when strains are applied to the Bi2Te3 thin films by bending the substrates. To enhance the versatility of the flexo-photovoltaic effect, in this study, Bi2Te3 thin films were sputtered onto a flexible substrate under a pre-curved condition, and strains were induced when the films were flattened. The crystal orientation and strains in the Bi2Te3 thin films were affected by the pre-curved conditions. The Bi2Te3 thin film deposited using a concave pre-curved condition exhibited an output voltage increase of approximately 15 % compared with the film deposited under a flat condition. This discovery suggests that strained Bi2Te3 thin films can efficiently produce an output voltage under light irradiation without requiring a p–n junction, making them suitable for various photodetector applications.
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