Abstract
Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties were carefully characterized and discussed. The thick layers exhibited strong band-edge absorption near 215 nm. A highly oriented two-dimensional h-BN structure was formed at the film/sapphire interface, which permitted an effective exfoliation of the thick BN film onto other adhesive supports. And this structure resulted in a metal-semiconductor-metal (MSM) device prototype fabricated on BN membrane delaminating from the substrate. MSM photodiode prototype showed low dark current of 2 nA under 100 V, and 100 ± 20% photoconductivity yield for deep UV light illumination. These wafer-scale MOVPE-grown thick BN layers present great potential for the development of deep UV photodetection applications, and even for flexible (opto-) electronics in the future.
Highlights
Hexagonal boron nitride (h-BN) has remarkable properties including a 2D graphene-analogue structure, high thermal conductivity, chemical inertness, strong mechanical strength, wide bandgap and large thermal neutron capture cross-section
We report BN layers with thicknesses above 1 μm grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE)
Thick BN layers were grown by MOVPE on 2-inch sapphire substrates
Summary
Hexagonal boron nitride (h-BN) has remarkable properties including a 2D graphene-analogue structure, high thermal conductivity, chemical inertness, strong mechanical strength, wide bandgap and large thermal neutron capture cross-section. It is a promising material for various electronic and optoelectronic devices. Wafer-scale exfoliation was achieved[8] based on the realization of large-area uniform 2D layered BN9. The structural and optical properties were explored, which is the basis for demonstrating applications of these grown crystal films. Metal-semiconductor-metal (MSM) device prototype fabricated on the BN membrane delaminated and separated from the substrate, which was possible because of the 2D layered structure at the film/substrate interface. The MSM deep UV photodiode prototypes demonstrated low dark current level of 2 nA under 100 V and strong photoconductivity yield of 100 ± 20% under deep UV light
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