Abstract
Abstract Structure and impurity behaviour of silicon doped by B+ ion implantation up to dose of 2 × 1015 ion/cm2 have been investigated after lamp pulse annealing. It has been demonstrated that the implanted layer structure strongly depends on the implantation dose, light energy density, as well as the crystallographic orientation. The optimal annealing result in the structure, which is equivalent to that obtained in the thermal treatment, The impurity diffusive redistribution proved to be rather weaker then in the case of thermal treatment.
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