Abstract
A numerical fit for the temperature dependence of semiconductor band gaps of the form Eg(T)=Eg(0)-S<\\hbarΩ>[coth (<\\hbarΩ>/2kBT)-1] is applied to several important elemental and III–V compound semiconductors. From a systematic analysis, the relation between <\\hbarΩ> and Debye temperature is derived, and a new effective coupling constant is defined to demonstrate the relative strength of the electron-phonon interaction on the semiconductor band-gap energy.
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