Abstract
Electronic transmission in monolayer ReS_{2} and ReS_{2} based van der Waals (vdW) heterointerfaces are studied here. Since ReS_{2}/WSe_{2} and ReS_{2}/MoSe_{2} type-II vdW heterostructures are suitable for near infrared (NIR)/short-wave infrared (SWIR) photodetection, the role of interlayer coupling at the heterointerfaces is examined in this work. Besides, a detailed theoretical study is presented employing density functional theory (DFT) and nonequilibrium Green’s function (NEGF) combination to analyse the transmission spectra of the two-port devices with ReS_{2}/WSe_{2} and ReS_{2}/MoSe_{2} channels and compare the near-equilibrium conductance values. Single layer distorted 1T ReS_{2} exhibits formation of parallel chains of ‘Re’-‘Re’ bonds, leading to in-plane anisotropy. Owing to this structural anisotropy, the charge carrier transport is very much orientation dependent in ReS_{2}. Therefore, this work is further extended to investigate the role of clusterized ‘Re’ atoms in electronic transmission.
Highlights
Electronic transmission in monolayer ReS2 and ReS2 based van der Waals heterointerfaces are studied here
Utilizing nonequilibrium Green’s function (NEGF) along with density functional theory (DFT), we have shown the electronic transmission of two-port devices with the ReS2/WSe2 and the ReS2/MoSe2 channels and compared their conductance values at near-equilibrium
Even with the increase in number of layers of ReS2 and WSe2, we find that the near-direct type-II band alignment remains unaltered, ensuring efficient optical generation across the van der Waals (vdW) interface[22]
Summary
Electronic transmission in monolayer ReS2 and ReS2 based van der Waals (vdW) heterointerfaces are studied here. Since ReS2/WSe2 and ReS2/MoSe2 type-II vdW heterostructures are suitable for near infrared (NIR)/short-wave infrared (SWIR) photodetection, the role of interlayer coupling at the heterointerfaces is examined in this work. Single layer distorted 1T ReS2 exhibits formation of parallel chains of ‘Re’-‘Re’ bonds, leading to in-plane anisotropy. Owing to this structural anisotropy, the charge carrier transport is very much orientation dependent in ReS2. As reported in[29], distorted 1T ReS2 exhibits direction dependent I-V as well as transfer characteristics Such experimental observation motivated us to explore the electronic properties of single layer distorted 1T ReS2 and investigate the role of clusterized ‘Re’ atoms in carrier transmission
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