Abstract
Low-temperature electron mobility of a strictly two-dimensional electron gas (2DEG) in a modulation delta-doped AlxGa1-xAs/GaAs/AlxGa1-xAs heterostructure has been obtained by using Boltzmann equation and relaxation time approximation. At low temperatures, the electron mobility is governed by the electron-ionized impurity scattering in which the electrons screen electron-impurity interaction through the dielectric function of the system. We have investigated the effect of ionized impurities on the low-temperature electron mobility beyond the random phase approximation by including the local field corrections. We have used Hubbard and finite-temperature Hubbard local field corrections to calculate the electron mobility as a function of temperature. We have found that the Hubbard local field corrections enhance the electron mobility at low temperatures in comparison with RPA results and less enhancement is obtained by using temperature dependent Hubbard approximation.
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