Abstract
The effective preparation methods of transition metal carbide, nitride, boride, and hydride films (so-called interstitial phases (IPs)) are described. The different versions of PVD and CVD techniques are compared and discussed. Special attention is paid to the structure analysis of IP films. Physical and mechanical properties as well as recrystallization of these subjects, including multilayer ones, are analysed in detail. The development of new materials based on IP films is shown to parallel closely the progress in nanocrystalline materials science.
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