Abstract
In AlN films prepared by the facing target system, a decrease in degree of c-axis orientation, film coloring and film cracking or peeling from the substrate were observed. This film degradation is thought to be related to insulative films in general. In order to clarify how these phenomena are induced, we prepared samples under various sputtering conditions; i.e., by changing target holders, placing a ground mesh in front of the substrate and using a positively biased electrode. It is confirmed that plasma exposure severely influences c-axis orientation of AlN films. To decrease this influence, it is important that electrons flow adequately into the anode.
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