Abstract
A completely ionized and clustered beam of Mo or Cu is deposited with variable kinetic energy on a substrate, and the filling of micron-sized contact holes on semiconductor devices is studied. An excellent hole filling is obtained for the impact of charged copper clusters, if they contain 1000–3000 Cu atoms and impinge with a kinetic energy of about 10 eV per atom on a substrate having a temperature of 500 K. The morphology of small hole fillings by slow and energetic cluster impact is discussed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
