Abstract
Using single-crystal Bi2S3 nanowires, we successfully fabricate nanodevices on Si substrate by e-beam lithography. Field-effect as well as novel optoelectronic properties have been obtained from the devices. Under visible or UV light illumination, the conductivity of Bi2S3 nanowire raises several to several orders times within milliseconds due to the generation of electron-hole pairs. Illuminating Bi2S3 nanowires with UV in different atmosphere shows that O2 adsorption also affects the conductivity of the Bi2 S3 nanowires obviously. We believe such device is a good candidate of novel multi-functional nanodevices
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