Abstract
Abstract An electric field dependence of the d.c. conductivity and of the trap-limited carrier drift mobility is shown to occur in a range of non-crystalline semiconductors. Furthermore, the functional form of the dependence is found to be closely similar in each case. This behaviour is examined in terms of the models commonly proposed to explain field-dependent transport, but the data do not appear to be consistent with such models. It is suggested that the dependence may be due to a field modification of parameters controlling carrier motion in the region of the ‘mobility edge', but a quantitative analysis in such terms does not appear possible at present.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
