Abstract
Monolayer and multilayer Ge nanocluster structures were prepared on Si(1 0 0) using molecular beam epitaxy. The cluster size was ⩽10 nm and cluster density was ∼1010 cm−2. A stable field electron emission was obtained from these structures, showing current peaks in the current–voltage characteristics, which may be attributed to the resonant electron tunneling via the energy levels of the nanocluster potential well. For cluster multilayers, the current–voltage curves also showed current peaks with a complex shape. The cluster multilayer structures had a considerable temperature sensitivity, as well as photosensitivity, in the wavelength range from 0.4 to 10 μm.
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