Abstract
In the search for high-TC Si or Ge based ferromagnetic semiconductors, we present here the magnetic and transport properties of Ge1–xMnx nano-pillars. These pillars self-organize during the MBE growth of thin Mn doped (6%) Ge films as a consequence of the in-plane and out-of-plane diffusion of Mn atoms. Their composition is close to Ge2Mn and their average diameter and spacing are 3 nm and 10 nm respectively. Magnetic measurements evidence a ferromagnetic phase up to 400 K giving rise to anomalous Hall effect at room temperature. Moreover we evidence a large positive magnetoresistance (up to 7000% at 30 K and 9 T) probably due to the conductivity mismatch between the Mn-rich nano-pillars and the Mn-poor surrounding Ge matrix. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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