Abstract
We have synthesized a new ferromagnetic topological insulator by doping Cr to the ternary topological-insulator material TlSbTe2. Single crystals of Tl1−xCrxSbTe2 were grown by a melting method and it was found that Cr can be incorporated into the TlSbTe2 matrix only within the solubility limit of about 1%. The Curie temperature θC was found to increase with the Cr content but remained relatively low, with the maximum value of about 4 K. The easy axis was identified to be the c-axis and the saturation moment was 2.8 μB (Bohr magneton) at 1.8 K. The in-plane resistivity of all the samples studied showed metallic behavior with p-type carriers. Shubnikov-de Hass oscillations were observed in samples with the Cr-doping level of up to 0.76%. We also tried to induce ferromagnetism in TlBiTe2 by doping Cr, but no ferromagnetism was observed in Cr-doped TlBiTe2 crystals within the solubility limit of Cr which turned out to be also about 1%.
Highlights
We have synthesized a new ferromagnetic topological insulator by doping Cr to the ternary topological-insulator material TlSbTe2
Single crystals of Tl1−xCrxSbTe2 were grown by a melting method and it was found that Cr can be incorporated into the TlSbTe2 matrix only within the solubility limit of about 1%
Three-dimensional (3D) topological insulators (TIs) are a class of materials characterized by a nontrivial Z2 topology of the bulk wave function, where an insulating bulk hosts a linearly dispersing surface state protected by the time-reversal symmetry.[1,2,3,4,5,6,7,8]
Summary
We have synthesized a new ferromagnetic topological insulator by doping Cr to the ternary topological-insulator material TlSbTe2. A. Taskin, and Yoichi Andoc Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan (Received 31 March 2015; accepted 20 May 2015; published online 3 June 2015)
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