Ferroelectric properties of Mn-doped BiFeO 3 thin films

Abstract

Bi(Fe 0.99Mn 0.01)O 3 thin films were prepared on a Pt(111)/Ti/SiO 2/Si(100) substrates by pulsed laser deposition at various deposition temperature, such as at 520 °C, 530 °C, and 540 °C, respectively. The film deposited at 540 °C exhibited better ferroelectric property such as large remnant polarization (2 P r = 139 μC/cm 2) and low coercive field (2 E c = 630 kV/cm). However, high leakage current density was observed especially in a high electric field range. The improvements were attributed to the facts of highly (111)-preferred orientation and uniform large grain size when the film was deposited at 540 °C.