Abstract

The considerable investigations of ferroelectric polymer thin films have explored new functional devices for flexible electronics industry. Polyvinylidene fluoride (PVDF) and its copolymer with trifluoroethylene (TrFE) are the most commonly used polymer ferroelectric due to their well‐defined ferroelectric properties and ease of fabrication into thin films. In this study, we review the recent advances of thin ferroelectric polymer films for organic electronic applications. Initially the properties of ferroelectric polymer and fabrication methods of thin films are briefly described. Then the theoretical polarization switching models for ferroelectric polymer films are summarized and the switching mechanisms are discussed. Lastly the emerging ferroelectric devices based on P(VDF‐TrFE) films are addressed. Conclusions are drawn regarding future work on materials and devices.

Highlights

  • In recent years, driven by the rapidly developing miniaturized electronics, new organic devices based on polyvinylidene fluoride (PVDF) and its copolymer with trifluoroethylene (TrFE) thin films have attracted intensive research interest

  • The switching behavior of ferroelectric polymer thin films has been extensively investigated to understand the kinetics of polarization switching, which is very critical for intentional design and preparation of materials for various purposes

  • Significant advances have been made on the development of ferroelectric devices based on PVDF and P(VDF-TrFE) thin films in the last ten years

Read more

Summary

Introduction

Driven by the rapidly developing miniaturized electronics, new organic devices based on polyvinylidene fluoride (PVDF) and its copolymer with trifluoroethylene (TrFE) thin films have attracted intensive research interest. The ferroelectricity in PVDF and P(VDF-TrFE) originates from molecular dipoles associated with electropositive hydrogen atoms and electronegative fluoride atoms, which are switchable upon an external field [2] They are promising candidates for the generation nonvolatile high-density memory applications which can replace perovskite ceramics currently used in the commercial ferroelectric random access memories (FRAMs) [3,4,5]. For P(VDF-TrFE) films, the ferroelectricity and polarization switching have been found for two monolayers (l = 1 nm) [20] It opened the way for investigation of finite size effect at the nanoscale. The development of ferroelectric polymer thin film devices will have a significant impact on organic electronics

Ferroelectric Polymers
Thin Films Fabrication
Polarization Switching Mechanism
Applications
Findings
Summary and Outlook
Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.