Abstract
As a new type of semiconductor memory device, memristors receive wide attention because of their ability to realize multilevel memory and synapse‐like learning. However, memristors made of traditional materials often demonstrate dispersion and unstable switching. Ferroelectric memristors can solve this problem and realize the regulation of synaptic plasticity. Herein, memristors based on Hf0.5Zr0.5O2 are fabricated on Si substrates. The I–V curve shows that the turn‐on voltage of the device is lower for Hf0.5Zr0.5O2 film than for other compositions in HfxZr1−xOy films, and the ratio of ROFF/RON can reach 104, implying excellent device performance. Furthermore, the train of pulse with different parameters can influence the modulation of device conductance. Also, the synaptic plasticity behavior of the device is studied. These results lay the foundation for the development of ferroelectric thin films with neuron‐like artificial synapses.
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