Abstract
A ferroelectric-gated nanoelectromechanical (NEM) nonvolatile random-access memory cell [negative capacitance (NC)-NEM memory] is proposed and investigated. By adjusting the structural parameters of the NEM relay, the pull-in voltage of the NC-NEM memory cell can be reduced, and its pull-out voltage can even become negative. Hence, an NEM relay with a ferroelectric layer in the gate stack can be used as a nonvolatile random-access memory cell. Herein, the device design and operational principles for read/program/erase are introduced in detail. The program/erase voltage and the program delay time of the NC-NEM memory cell have been quantitatively estimated.
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