Abstract
In present work, La0.6Sr0.4CoO3 (LSCO)-buffered 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMNT) thin film was grown on Pt/Ti/SiO2/Si substrate by using pulsed laser deposition. The introduction of the conductive LSCO layer can effectively depress the formation of pyrochlore phase and improve the crystallization quality of perovskite PMNT thin film ascribed to the similar crystal structure and lattice constant. Enhanced ferroelectric and dielectric properties were obtained with the saturated polarization Ps of ∼44μC/cm2, remanent polarization Pr of ∼16.5μC/cm2, dielectric constant ε33T/ε0 of ∼2833 at 1kHz, and dielectric tunability of 67% under ∼10kV/mm. All these make it a potential candidate for MEMS devices.
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