Ferroelectric and dielectric properties of 0.62Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 thin films on La0.6Sr0.4CoO3 buffered Si substrates

Abstract

0.62Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 (0.62PMN–0.38PT) thin films were deposited on La0.6Sr0.4CoO3 (LSCO) buffered Si substrates by radio-frequency magnetron sputtering. It has been found that the 0.62PMN–0.38PT films show a (100) preferred oriented perovskite phase on (100) preferred oriented LSCO layer while they show a (110) preferred perovskite phase on (110) preferred oriented LSCO layer. The formations of such preferred orientations are attributed to co-contribution of the surface energy and lattice-match interface energy. The (110) preferred oriented 0.62PMN–0.38PT film exhibits a relatively low remnant polarization of 12.1μC/cm2 while a low coercive field of 27kV/cm compared with (100) preferred oriented one (13.9μC/cm2, 56kV/cm). Moreover, the (110) preferred oriented film shows a larger dielectric constant of ∼2260 and a lower dielectric loss of 0.09 at 1kHz than those of (100) preferred oriented one (1050 and 0.19). The results demonstrate that the enhanced ferroelectric and dielectric properties are achieved for (110) preferred oriented film, which is correlated with large anisotropy in the texture films induced by LSCO buffer layers.