Abstract
Studies of the high speed modulation response of semiconductor lasers, exhibited a strong damping of the relaxation oscillation resonance and suggested the presence of a nonlinear gain process with a characteristic time much shorter than the carrier lifetime[1]. Several possible mechanisms were proposed which might produce this nonlinear gain, including spectral hole burning, carrier heating, and four wave mixing related effects[2]. CW studies have been performed in an effort to indentify these nonlinear gain mechanisms[2,3]. However, time domain femtosecond measurements have the advantage that they can directly characterize the ultrafast gain dynamics. Several single-wavelength femtosecond pump-probe investigations were performed on various diode laser systems[4,5]. Carrier heating effects and spectral hole burning were reported, but to date, no direct femtosecond measurements of the wavelength dependence of spectral hole buring have been possible.
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