Abstract
The electrophysical characteristics of the PZT film formed on a silicon by the method of high-frequency reactive plasma sputtering were studied, and their relationship with the structure of the film was established. In particular, the hysteresis in the capacitance-voltage characteristics of the metal - ferroelectric - semiconductor indicates the polarization of the film, which, in turn, indicates the presence of the perovskite phase in the PZT film. However, the crystallite size of this phase is so small that it cannot be detected by X-ray diffraction analysis.
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