Features of the radiative properties of quantum-size particles of narrow-gap semiconductors

Abstract

For colloidal quantum-size particles (QP) of narrow-gap semiconductors, in contrast to quantum dots of wide-gap CdSe, in QP-PbS there take place an anomalous temperature dependence of the photoluminescence intensity. Also, in the planar microstructure containing QP-InSb, long-wavelength radiation (more than 3 μm) and photoconductivity (over 20 μm) was observed. Under certain conditions, the radiation intensity and photoconductivity demonstrate a resonance maximum. The effects were explained in the model of a one-dimensional quantum oscillator, which energy substantially depends on the effective mass of its quasi-free electron. This leads to competition between the manifestations of long-wave radiation and photoluminescence, and hence, to the anomalous temperature dependence of photoluminescence. It is assumed that QP-InSb in a planar microstructure can be sources and receivers of terahertz radiation, which properties depend on the crystal structure of quantum-sized particles determined by the parameters of their synthesis. Keywords: quantum-dimensional particle, quantum dot, narrow-gap semiconductor, effective mass, Brillouin zone, dimensional quantization, quantum oscillator, photoluminescence, long-wavelength radiation.