Abstract
The paper examines the features of silicon behavior (neat – Kr0 grade, alloy – Cu–50 % Si) when introduced into oxidized copper melt. The minimum value of oxygen content in copper was found. With this value silicon introduction leads not to deoxidation of the entire volume with silicon oxide formation, but only to surface deoxidation at the «silicon/oxidized molten copper» interface with the formation of liquid Cu–Si alloy immiscible with the main melt and shaped as a ball with a total weight of 5–10 % of the whole melt. The mechanism of such ball appearance was described. It was found that the ball formation rate is affected by the amount of oxygen in molten copper. The results obtained are valuable from a practical perspective and may be used in copper alloy production.
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Schedule a callMore From: Izvestiya Vuzov Tsvetnaya Metallurgiya (Proceedings of Higher Schools Nonferrous Metallurgy)
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