Abstract
The statistical fluctuations in the potential in a disordered semiconductor are studied in the presence of constant current. The fluctuation part of the voltage between two points is expressed through the conductivity fluctuation correlator. It is shown that measuring the voltage transverse to the current permits one to study the nature of the inhomogeneities in the order parameter of the phase transitions acting on the conductivity (superconducting transition, metal-dielectric transition, and the magnetic transition in metals).
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