Abstract

Radiation effects of fast neutrons have been measured in silicon detectors of varying resistivity irradiated to ≈ 10 11 n/cm 2 over periods of weeks. The principal damage effect is increased leakage current due to generation of carriers from defect levels in the depletion region. Damage and leakage current constants have been established for detector resistivities between 10 and 27 000 ω cm and lie in the range of (0.7–2) × 10 7 s/cm 2 ( K) for PuBe neutrons. A slight increase in K was observed for higher resistivities which translates into somewhat improved radiation hardness. A fit of these data was attempted to a two-level recombination formulation of the damage constant.

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