Abstract
We have studied the effect of thermal treatment on the domain wall dynamics of FeSiB and FeCoMoB microwires. It was shown that annealing in transversal magnetic field increases the domain wall mobility as well as the domain wall velocity. Annealing under the tensile stress hinders the appearance of the monodomain structure but application of tensile stress leads to the magnetic bistability having the domain wall mobility twice higher that in as-cast state. Further increase of the tensile stress reduces the domain wall mobility but the domain wall velocity increases as a result of the decrease of critical propagation field. Annealing of the FeCoMoB microwire by Joule heating leads to introduction of the circular anisotropy that favors the vortex domain wall. Such treatment increases the domain wall mobility as well as the maximum domain wall velocity.
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