Abstract
A novel technique of dry etching single crystal Si and thermally grown SiO 2 films is investigated. It consists in the simultaneous irradiation of samples by independently controlled flows of flourine-containing radicals and inert gas ions or fast atoms. The presence of a flourine-containing flow leads to a significant increase of the silicon chemical sputtering yield as compared to physical inert gas ion sputtering. The obtained dependences of the etch rate on ion energy and mass cannot be completely accounted for within the scope of the model of collision cascade sputtering of loosely bound silicon fluorination products.
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