Abstract
Accelerating Bias Temperature Instability (BTl) through temperature activated charge trapping and chemical reactions is commonly used during qualification measurements of MOSFETs to enable lifetime extrapolation of typically up to ten years. Capture and emission time (CET) maps extracted from measurement data at constant temperatures are used to model the time dynamics responsible for the threshold voltage shift of BTl. We demonstrate a new measurement technique for the acquisition of CET maps and show that Arrhenius temperature activation is valid for a large number of defects and can be described by an activation energy map. The goal of the temperature accelerated MSM technique is to extend the experimental time window of degradation and recovery to more than 10 years without requiring voltage acceleration and time extrapolation.
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