Abstract
Voltage-driven 180° magnetization switching provides a low-power alternative to current-driven magnetization switching widely used in spintronic devices. Here we computationally demonstrate a promising route to achieve voltage-driven in-plane 180° magnetization switching in a strain-mediated multiferroic heterostructure (e.g., a heterostructure consisting of an amorphous, slightly elliptical Co40Fe40B20 nanomagnet on top of a Pb(Zr,Ti)O3 film as an example). This 180° switching follows a unique precessional path all in the film plane, and is enabled by manipulating magnetization dynamics with fast, local piezostrains (rise/release time <0.1 ns) on the Pb(Zr,Ti)O3 film surface. Our analyses predict ultralow area energy consumption per switching (~0.03 J/m2), approximately three orders of magnitude smaller than that dissipated by current-driven magnetization switching. A fast overall switching time of about 2.3 ns is also demonstrated. Further reduction of energy consumption and switching time can be achieved by optimizing the structure and material selection. The present design provides an additional viable route to realizing low-power and high-speed spintronics.
Highlights
Where D is electric displacement tensor, σ is the stress tensor, eT is the transpose of piezoelectric stress coefficient tensor, ε0 is the vacuum permittivity, εrS is the relative dielectric constant tensor under the mechanical clamped boundary condition, and cE is elastic constant tensor under constant electric field
By combining finite-element analysis and phase-field modeling, we have demonstrated a nonvolatile 180° in-plane magnetization switching driven by a unipolar pulse voltage in a multiferroic heterostructure with amorphous Co40Fe40B20 elliptical nanomagnet on top of piezoelectric layer (PZT) film
We have shown that the magnetization vector, initially along the in-plane long axis, would precess across the in-plane short axis (>90° precession) when pulse voltage is on
Summary
Where D is electric displacement tensor, σ is the stress tensor, eT is the transpose of piezoelectric stress coefficient tensor, ε0 is the vacuum permittivity, εrS is the relative dielectric constant tensor under the mechanical clamped boundary condition, and cE is elastic constant tensor under constant electric field. A PZT thin film of 3000 nm×3000 nm×400 nm is considered which is fixed at the bottom (by the substrate) and is free on top. To mimic a large sample, periodic boundary conditions are applied on the four surrounding side surfaces. A free tetrahedral mesh with quadratic shape functions is used for discretizing the domain. Shape of two top electrodes is optimized to minimize the local electric field concentration and to obtain an almost uniform strain distribution in the central ellipse regi
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