Abstract
The author reviews far-infrared studies of spin resonance (SR) in narrow-gap semiconductors, with emphasis on SR of the conduction band. While the SR transition is normally electric-dipole-forbidden, it is well known that there exist mechanisms (e.g. 'non-parabolicity' or inversion asymmetry) which relax these selection rules. The author discusses these mechanisms and their relative importance. Although the author concentrates in this review on the Gamma 6-like conduction band of InSb, the author also reviews experimental results on other materials (e.g. HgSe, HgTe, Hg1-xMnxSe). The author discusses the anisotropy of the spin resonance and compares the g factors of free and donor-bound electrons. Furthermore, the author describes certain 'external' effects which influence the observation of SR in semiconductors, e.g. spin-spin exchange interaction in diluted magnetic semiconductors, plasma-shifted SR and uniaxial stress. Special attention is given to the interference of the electric dipole and magnetic dipole matrix elements, which provides a unique opportunity for the determination of the inversion asymmetry parameter (including its sign) in zincblende narrow-gap semiconductors.
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