Abstract
To improve the performance of phase change memory (PCM) and reduce the cost of fabrication, we propose a new lateral PCM structure based on the technology of angle evaporation to define the critical dimension controllable, not limited by the limitation of lithography resolution. The fabrication process is cost-effective. PCM cells featured 80nm×100nm were successfully demonstrated, although the resolution of the aligned used was 1µm only. Compared with the traditional lateral PCM structure, finite element simulation results show that the new structure has better thermal stability.
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