Abstract
Double barrier Si-based Resonant Tunneling Diode (RTD) structures were fabricated by ultra high vacuum (UHV) wafer bonding. 300 mm ultra thin body silicon-on-insulator (SOI) wafers with 10 nm top Si layers were developed and used for the integration of Si/SiO2((<3nm)/Si(<10nm)/SiO2(<3nm)/Si RTD structures. The dielectric oxide/Si interfaces characterized by Capacitance-Voltage (C-V) measurements were of good quality. The bonded oxide/Si interfaces characterized by high resolution transmission electron microscopy (HRTEM) were atomically sharp.
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